ST93003

Transistors Bipolar (BJT) Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR

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ST93003 Picture
SeekIC No. : 00204557 Detail

ST93003: Transistors Bipolar (BJT) Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR

floor Price/Ceiling Price

US $ .24~.36 / Piece | Get Latest Price
Part Number:
ST93003
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.36
  • $.32
  • $.28
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 10 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-32 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 10 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 10
Package / Case : SOT-32


Features:

· MEDIUM VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
· VERY HIGH SWITCHING SPEED



Application

· ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
-500
V
VCEO
Collector-Emitter Voltage (IB = 0)
-400
V
VEBO
Emitter-Base Voltage(IC = 0, IB = -0.75 A, tp < 10ms, Tj < 150)
V(BR)EBO
V
IC
Collector Current
-1.5
A
ICM
Collector Peak Current (tp < 5 ms)
-3
A
IB
Base Current
-0.75
A
IBM
Base Peak Current (tp < 5 ms)
-1.5
A
Ptot
Total Power Dissipation at Tc = 25
40
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



Description

The ST93003 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The ST93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST83003, its complementary NPN transistor.




Parameters:

Technical/Catalog InformationST93003
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)1.5A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce16 @ 350mA, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseSOT-32-3, TO-126-3
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ST93003
ST93003
497 6999 ND
4976999ND
497-6999



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