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ST93C56C

Features: 1 MILLION ERASE/WRITE CYCLES, with40 YEARS DATARETENTIONDUAL ORGANIZATION: 128 x 16 or 256 x 8BYTE/WORDand ENTIRE MEMORYPROGRAMMING INSTRUCTIONSSELF-TIMED PROGRAMMING CYCLE withAUTO-ERASEREADY/BUSY SIGNAL DURINGPROGRAMMINGSINGLE SUPPLY VOLTAGE: 4.5V to 5.5V for ST93C56 version 3V to 5....

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SeekIC No. : 004506919 Detail

ST93C56C: Features: 1 MILLION ERASE/WRITE CYCLES, with40 YEARS DATARETENTIONDUAL ORGANIZATION: 128 x 16 or 256 x 8BYTE/WORDand ENTIRE MEMORYPROGRAMMING INSTRUCTIONSSELF-TIMED PROGRAMMING CYCLE withAUTO-ERASER...

ST93C56C Data Sheet

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Part Number:
ST93C56C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATARETENTION
DUAL ORGANIZATION: 128 x 16 or 256 x 8
BYTE/WORDand ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
  4.5V to 5.5V for ST93C56 version
  3V to 5.5V for ST93C57 version
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93C56, ST93C56C, ST93C57Care
   replaced by the M93C56


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
TA Ambient Operating Temperature 40 to 125
TSTG Storage Temperature 65 to 150
TLEAD Lead Temperature, Soldering (SO8 package)             40 sec

                                               (PSDIP8 package)        10 sec		 215
260
VIO Input or Output Voltages (Q = VOH or Hi-Z) 0.3 to VCC +0.5 V
VCC Supply Voltage 0.3 to 6.5 V
VESD Electrostatic Discharge Voltage (Human Body model) (2) 4000 V
Electrostatic Discharge Voltage (Machine model) (3) 500 V



Description

This specification of the ST93C56C covers a range of 2K bit serial EEPROM products, the ST93C56, 56C specified at 5V ± 10% and the ST93C57C specified at 3V to 5.5V. In the text, products are referred to as ST93C56.

The ST93C56C is a 2K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-THOMSON's High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 2K bit memory is divided into either 256 x 8 bit bytes or 128 x 16 bit words. The organization may be selected by a signal applied on the ORG input.




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