ST93CS56

Features:

1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATARETENTION
SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
READY/BUSY SIGNAL DURING PROGRAMMING
SINGLE SUPPLY VOLTAGE
   3V to 5.5V for the ST93CS56
   2.5V to 5.5V for the ST93CS57
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS56 and ST93CS57 are replaced by the M93S56


Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	40 to 85	°C
TSTG	Storage Temperature	65 to 150	°C
TLEAD	Lead Temperature, Soldering (SO8 package) 40 sec (PSDIP8 package) 10 sec	215           260	°C
VIO	Input or Output Voltages (Q = VOH or Hi-Z)	0.3 to VCC +0.5	V
VCC	Supply Voltage	0.3 to 6.5	V
VESD	Electrostatic Discharge Voltage (Human Body model) (2)	3000	V
	Electrostatic Discharge Voltage (Machine model) (3)	500	V

Description

The ST93CS56 and ST93CS57 are 2K bit Electrically Erasable ProgrammableMemory (EEPROM) fabricatedwith SGS-THOMSON'sHigh Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q.The 2K bit memory is organized as 128 x 16 bit words.Thememory is accessed by a set of instructions which include Read,Write, PageWrite, Write All and instructions of the ST93CS56 used to set the memory protection.A Read instruction loads the address of the first word to be read into an internal address pointer.