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ST93CS67

Features: 1 MILLION ERASE/WRITE CYCLES, with40 YEARS DATARETENTIONSELF-TIMED PROGRAMMING CYCLE withAUTO-ERASEREADY/BUSY SIGNAL DURINGPROGRAMMINGSINGLE SUPPLY VOLTAGE 3V to 5.5V for the ST93CS66 2.5V to 5.5V for the ST93CS67USER DEFINED WRITE PROTECTED AREAPAGE WRITE MODE (4 WORDS)SEQUENTIAL READ O...

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SeekIC No. : 004506928 Detail

ST93CS67: Features: 1 MILLION ERASE/WRITE CYCLES, with40 YEARS DATARETENTIONSELF-TIMED PROGRAMMING CYCLE withAUTO-ERASEREADY/BUSY SIGNAL DURINGPROGRAMMINGSINGLE SUPPLY VOLTAGE 3V to 5.5V for the ST93CS66 2.5V...

ST93CS67 Data Sheet

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Part Number:
ST93CS67
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATARETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
3V to 5.5V for the ST93CS66
2.5V to 5.5V for the ST93CS67
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS66 and ST93CS67 are replaced by
the M93S66


Pinout

Connection Diagram


Specifications

Symbol
 Parameter
Value
Unit
TA
 Ambient Operating Temperature
40 to 85
°C
TSTG
 Storage Temperature
65 to 150
°C
TLEAD
 Lead Temperature, Soldering (SO14 package)
(PSDIP8 package)		 40 sec
10 sec
215
260
°C
VIO
 Input or Output Voltages (Q = VOH or Hi-Z)
0.3 to VCC +0.5
V
VCC
 Supply Voltage
0.3 to 6.5
V
VESD
 Electrostatic Discharge Voltage (Human Body model) (2)
2000
V
Electrostatic Discharge Voltage (Machine model) (3)
500
V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 ).
3. EIAJ IC-121 (Condition C) (200pF, 0 ).


Description

The ST93CS67 are 4K bit Electrically Erasable ProgrammableMemory (EEPROM) fabricatedwith SGS-THOMSON'sHigh Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q.

The 4K bit memory of the ST93CS67 is organized as 256 x 16 bit words.Thememory is accessed by a set of instructions which include Read,Write, PageWrite, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer.




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