ST95P04

Features:

1 MILLION ERASE/WRITE CYCLES
40 YEARS DATA RETENTION
SINGLE 3V to 5.5V SUPPLY VOLTAGE
SPI BUS COMPATIBLE SERIAL INTERFACE
1 MHz CLOCK RATE MAX
BLOCK WRITE PROTECTION
STATUS REGISTER
16 BYTE PAGE MODE
WRITE PROTECT
SELF-TIMED PROGRAMMING CYCLE
E.S.D.PROTECTION GREATER than 4000V
The ST95P04 will be replaced shortly by theupdated version ST95040


Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	40 to 85
TSTG	Storage Temperature	65 to 150
TLEAD	Lead Temperature, Soldering (SO8 package)       40 sec                                                (PSDIP8 package)  10 sec	215 260
VO	Output Voltage	0.3 to VCC +0.6	V
VI	Input Voltage	0.3 to 6.5	V
VCC	Supply Voltage	0.3 to 6.5	V
VESD	Electrostatic Discharge Voltage (Human Body model) (2)	4000	V
	Electrostatic Discharge Voltage (Machine model) (3)	500	V

Description

The ST95P04 is a 4K bit Electrically ErasableProgrammable Memory (EEPROM) fabricated withSGS-THOMSON's High Endurance Single PolysiliconCMOS technology. The 4K bit memory is organisedas 32 pages of 16 bytes. The memory is accessed by a simple SPI bus compatible serial interface. The bus signals are a serial clock input(C), a serial data input(D) and a serial data output(Q). The device connected to the bus is selectedwhen the chip select input (S) goes low. Communications with the chip of the ST95P04 can be interrupted with a hold input (HOLD). The write operation is disabled by a write protect input (W).