STB100NF04LT4

The is STB100NF04LT4 the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

The features of STB100NF04LT4: (1)typical RDS(on) = 0.0036 W; (2)low threshold drive; (3)100% avalanche tested; (4)logic level device.

The following is about the maximum ratings of STB100NF04LT4: (1)Drain-source Voltage (VGS = 0): 40 V ; (2)Drain- gate Voltage (RGS = 20 k): 40 V ; (3)Gate-Source Voltage: ± 16 V ; (4)Drain Current (continuous) at Tc = 25 : 100 A  ; (5)Drain Current (continuous) at Tc = 100 : 70 A ; (6)Drain Current (pulsed): 400 A ; (7)Total Dissipation at Tc = 25 : 300 W ; (8)Derating Factor: 2 W/ ; (9)Single Pulse Avalanche Energy: 1.4 J ; (10)Storage Temperature: -65 to 175   ; (11)max.Operating Junction Temperature: 175 .