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STB100NH02LT4

MOSFET N-Ch 24 Volt 60 Amp

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SeekIC No. : 00162017 Detail

STB100NH02LT4: MOSFET N-Ch 24 Volt 60 Amp

STB100NH02LT4 Data Sheet

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Part Number:
STB100NH02LT4
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 60 A
Drain-Source Breakdown Voltage : 24 V
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

` RDS(ON) * Qg industry's benchmark
` Conduction losses reduced
` Switching losses reduced
` Low threshold device


Application

Switching application


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 24 V
VDGR Drain-gate voltage (RGS = 20 k) 24  
VGS Gate-source voltage ± 20 V
ID(1) Drain current (continuous) at TC = 25°C 60 A
ID(1) Drain current (continuous) at TC = 100°C 60 A
IDM(2) Drain current (pulsed) 240 A
PTOT(3) Total dissipation at TC = 25°C 100 W
  Derating factor 0.67 W/°C
dv/dt Peak diode recovery voltage slope 600 V/ns
EAS Single pulse avalanche energy -55 to 175 mJ
Tj
Tstg		 Operating junction temperature
Storage temperature		 -55 to 175 °C



Description

The STB100NH02LT4 utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.




Parameters:

Technical/Catalog InformationSTB100NH02LT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2850pF @ 15V
Power - Max100W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB100NH02LT4
STB100NH02LT4



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