Position: Home  > All Categories> Integrated Circuits (ICs) > STB100NH02LT4

STB100NH02LT4

MOSFET N-Ch 24 Volt 60 Amp

product image

STB100NH02LT4 Picture
See larger image
SeekIC No. : 00162017 Detail

STB100NH02LT4: MOSFET N-Ch 24 Volt 60 Amp

STB100NH02LT4 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB100NH02LT4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 60 A
Drain-Source Breakdown Voltage : 24 V
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

` RDS(ON) * Qg industry's benchmark
` Conduction losses reduced
` Switching losses reduced
` Low threshold device


Application

Switching application


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 24 V
VDGR Drain-gate voltage (RGS = 20 k) 24  
VGS Gate-source voltage ± 20 V
ID(1) Drain current (continuous) at TC = 25°C 60 A
ID(1) Drain current (continuous) at TC = 100°C 60 A
IDM(2) Drain current (pulsed) 240 A
PTOT(3) Total dissipation at TC = 25°C 100 W
  Derating factor 0.67 W/°C
dv/dt Peak diode recovery voltage slope 600 V/ns
EAS Single pulse avalanche energy -55 to 175 mJ
Tj
Tstg		 Operating junction temperature
Storage temperature		 -55 to 175 °C



Description

The STB100NH02LT4 utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.




Parameters:

Technical/Catalog InformationSTB100NH02LT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2850pF @ 15V
Power - Max100W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB100NH02LT4
STB100NH02LT4



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Memory Cards, Modules
WT32
VTL5C7
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Switches
US32DMRJ
HBGQ22P-11ET
View more