STB10NA40

The features of STB10NA40 are typical RDS(ON) = 0.46, ± 30v gate to source voltage rating, 100% avalanche tested, repetitive avalanche data at 100, low intrinsic capacitances, gate charge minimized, reduced threshold voltage spread, through-hole i2pak (to-262) power package in tube (suffix"-1"), surface-mounting d2pack (to-263)(power package in tube (no suffix); or in tape & reel (suffix "t4")). The applications of STB10NA40 are high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies and motor drive.

The absolute maximum ratings of STB10NA40 are VDS (drain-source voltage (VGS = 0))=400 V, VDGR(drain-gate voltage (RGS  = 20 k))= 400 V, VGS (gate-source voltage)=± 30 V, ID(drain current (continuous) at Tc = 25)=10 A, ID(drain current (continuous) at Tc = 100)=6.3 A, IDM(• pulse width limited by safe operating area)(drain current (pulsed))=40 A, Ptot(total dissipation at Tc = 25)=125 W, derating factor=1 W/, Tstg(storage temperature)=-65 to 150, Tj(max. operating junction temperature)=150.

And the maximum value avalanche characteristics of STB10NA40 are IAR(avalanche current, repetitive or not-repetitive(pulse width limited by tj max, < 1%))=10 A, EAS(single pulse avalanche energy(starting Tj  = 25, ID = IAR, VDD = 50 V))=500 mJ, EAR(repetitive avalanche energy(pulse width limited by Tj  max,   < 1%))=20 mJ, IAR(avalanche current, repetitive or not-repetitive(Tc = 100, pulse width limited by Tj  max, < 1%))=6.3 A. And in the state of OFF, the electrical characteristics (Tcase = 25 unless otherwise specified) are V(BR)DSS(drain-source breakdown voltage; @ ID = 250 µA, VGS = 0)= 400 V(min), DSS(zero gate voltage drain current (VGS = 0))=250µA(VDS = Max rating)/1000µA(VDS  = Max rating x 0.8 Tc = 125), IGSS(gate-body leakage current (VDS = 0); @VGS = ± 30 V)=± 100nA(max).