STB10NA40T4

The features of STB10NA40T4 are typical RDS(ON) = 0.46, ± 30v gate to source voltage rating, 100% avalanche tested, repetitive avalanche data at 100, low intrinsic capacitances, gate charge minimized, reduced threshold voltage spread, through-hole i2pak (to-262) power package in tube (suffix"-1"), surface-mounting d2pack (to-263)(power package in tube (no suffix); or in tape & reel (suffix "t4")). The applications of STB10NA40 are high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies and motor drive.

The following is about the maximum ratings of STB10NA40T4: VDS (drain-source voltage (VGS = 0))=400 V, VDGR(drain-gate voltage (RGS  = 20 k))= 400 V, VGS (gate-source voltage)=± 30 V, ID(drain current (continuous) at Tc = 25)=10 A, ID(drain current (continuous) at Tc = 100)=6.3 A, IDM(• pulse width limited by safe operating area)(drain current (pulsed))=40 A, Ptot(total dissipation at Tc = 25)=125 W, derating factor=1 W/, Tstg(storage temperature)=-65 to 150, Tj(max. operating junction temperature)=150.

The electrical characteristics of the STB10NA40T4 are: (1)Drain-source Voltage: 400 V ; (2)zero gate voltage: 250A at VDS= max rating; (3)gate-body leakage current: ±100nA at VGS=±30V.