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STB10NB20

Features: ` TYPICAL RDS(on) = 0.30 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR...

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STB10NB20: Features: ` TYPICAL RDS(on) = 0.30 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEAppl...

STB10NB20 Data Sheet

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Part Number:
STB10NB20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.30
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  VERY LOW INTRINSIC CAPACITANCES
`  GATE CHARGE MINIMIZED
`  FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  SWITCH MODE POWER SUPPLIES (SMPS)
·  DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)
200
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
10
A
ID Drain Current (continuos) at TC = 100
6
A
IDM() Drain Current (pulsed)
40
A
Ptot Total Dissipation at TC = 25
85
W
  Derating Factor
0.68
W/
dv/dt (1) Peak Diode Recovery voltage slope
5.2
 V/ns
Tstg Storage Temperature
65 to 175
Tj Max. Operating Junction Temperature
150
() Pulse width limited by safe operating area
(1) ISD 10A, di/dt300A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process of the STB10NB20, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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