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STB10NC50-1

Features: ` TYPICAL RDS(on) = 0.48 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SU...

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STB10NC50-1: Features: ` TYPICAL RDS(on) = 0.48 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SW...

STB10NC50-1 Data Sheet

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Part Number:
STB10NC50-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.48
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
500
V
VGS
 Gate- source Voltage
± 30
V
ID
 Drain Current (continuos) at TC = 25
10
A
ID
 Drain Current (continuos) at TC = 100
6.3
A
IDM (`)
 Drain Current (pulsed)
40
A
Ptot
 Total Dissipation at TC = 25
135
W
 Derating Factor
1.08
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
3
V/ns
Tstg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150

(`) Pulse width limited by safe operating area.

(1) ISD 10 A, di/dt 100 A/ms, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics of the STB10NC50-1 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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