Position: Home  > All Categories> Integrated Circuits (ICs) > STB10NK60-1

STB10NK60-1

Features: ` TYPICAL RDS(on) = 0.65 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES ` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGS...

product image

STB10NK60-1 Picture
See larger image
SeekIC No. : 004507067 Detail

STB10NK60-1: Features: ` TYPICAL RDS(on) = 0.65 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES ` VERY GOOD MANUFACTURING REPEATIBILITYApplication...

STB10NK60-1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB10NK60-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.65
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  GATE CHARGE MINIMIZED
 `  VERY LOW INTRINSIC CAPACITANCES 
 `  VERY GOOD MANUFACTURING REPEATIBILITY


Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
 ·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
TO-220/
D2PAK/I2PAK		 TO-220FP TO-247
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
10
10(*)
 10
A
ID Drain Current (continuos) at TC = 100
5.7
5.7(*)
 5.7
A
IDM() Drain Current (pulsed)
36
36(*)
 36
A
Ptot Total Dissipation at TC = 25
115
35
 156
W
Derating Factor
0.92
0.28
 1.25
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
 -
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 150
() Pulse width limited by safe operating area
(1) ISD 10 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

The STB10NK60-1 is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
RF and RFID
X3C26P1-30S
1P620S
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Kits
IT243
UVSC-110-4E1
Cables, Wires
821-0814-a
415-0100-150
Line Protection, Backups
BX0023
A20B-1008-0550
View more