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STB11NK50Z

Features: ` TYPICAL RDS(on) = 0.48` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITY` ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL (D2PAK VERSION)Application· HIGH CURRENT, HIGH SPEED SWITCHING·...

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STB11NK50Z: Features: ` TYPICAL RDS(on) = 0.48` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITY` ADD SUFFIX ...

STB11NK50Z Data Sheet

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Part Number:
STB11NK50Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.48
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY
`  ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL (D2PAK VERSION)


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
TO-220/D2PAK
TO-220FP
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
10
10(*)
A
ID Drain Current (continuos) at TC = 100
6.3
6.3(*)
A
IDM(`) Drain Current (pulsed)
40
40(*)
A
PTOT Total Dissipation at TC = 25
125
30
W
Derating Factor
1
0.24
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
 -
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 150
55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 10 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STB11NK50Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary STB11NK50Z MDmesh™ products.




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