STB11NM60-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.4
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		STP(B)11NM60(-1)	STP11NM60FP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	11	11(*)	A
ID	Drain Current (continuos) at TC = 100	7	7(*)	A
IDM(`)	Drain Current (pulsed)	44	44(*)	A
PTOT	Total Dissipation at TC = 25	160	35	W
	Derating Factor	1.28	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20		V/ns
VISO	Insulation Winthstand Voltage (DC)	-	2500	V
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(`)Pulse width limited by safe operating area
(1) I_SD  11 A, di/dt 400 A/s, V_DD V_(BR)DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed


Description

The STB11NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products

Parameters:

Technical/Catalog Information	STB11NM60-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	450 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB11NM60 1 STB11NM601 497 5379 5 ND 49753795ND 497-5379-5