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STB11NM60

Features: ` TYPICAL RDS(on) = 0.4` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturizat...

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SeekIC No. : 004507076 Detail

STB11NM60: Features: ` TYPICAL RDS(on) = 0.4` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family i...

STB11NM60 Data Sheet

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Part Number:
STB11NM60
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/17

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.4
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter
Value
Unit
STP(B)11NM60(-1) STP11NM60FP
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
11
11(*)
A
ID Drain Current (continuos) at TC = 100
7
7(*)
A
IDM(`) Drain Current (pulsed)
44
44(*)
A
PTOT Total Dissipation at TC = 25
160
35
W
Derating Factor
1.28
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
VISO Insulation Winthstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
65 to 150
Tj
 Max. Operating Junction Temperature
150
(`)Pulse width limited by safe operating area
(1) ISD  11 A, di/dt 400 A/s, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

The STB11NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products




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