Features: ` TYPICAL RDS(on) = 0.4` HIGH dv/dt` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.Specifications Sy...
STB11NM60A-1: Features: ` TYPICAL RDS(on) = 0.4` HIGH dv/dt` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of hi...
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Symbol | Parameter |
Value |
Unit | |
| STP11NM60A STB11NM60A-1 |
STP11NM60AFP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
7 |
7(*) |
A |
| IDM(`) | Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
110 |
35 |
W |
| Derating Factor |
0.88 |
0.28 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
The STB11NM60A-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.