STB11NM60N-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance


Application

· Switching applications


Specifications

Symbol	Parameter	Value		Unit
		TO-220/I²PAK DPAK/IPAK	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	600		V
VGS	Gate- source Voltage	±25		V
ID	Drain Current (continuos) at TC = 25	10	10(1)	A
ID	Drain Current (continuos) at TC = 100	6.3	6.3(1)	A
IDM(2)	Drain Current (pulsed)	40	40(1)	A
PTOT	Total Dissipation at TC = 25	90	25	W
	Derating Factor	0.8	0.2	W/
dv/dt(3)	Peak Diode Recovery voltage slope	15		V/ns
Viso	Insulation Withstand Voltage (DC)	-	2500	V
TSTG	Operating Junction Temperature Storage Temperature	-55 to150

1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/s, VDD =80% V_(BR)DSS


Description

This series of STB11NM60N-1 is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Parameters:

Technical/Catalog Information	STB11NM60N-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	450 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 50V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB11NM60N 1 STB11NM60N1