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STB11NM60N

Features: · 100% avalanche tested· Low input capacitance and gate charge· Low gate input resistanceApplication· Switching applicationsSpecifications Symbol Parameter Value Unit TO-220/I²PAK D/D²PAK/IPAK TO-220FP VDS Drain-source voltage (VGS=0) 600 V ...

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SeekIC No. : 004507080 Detail

STB11NM60N: Features: · 100% avalanche tested· Low input capacitance and gate charge· Low gate input resistanceApplication· Switching applicationsSpecifications Symbol Parameter Value Unit TO...

STB11NM60N Data Sheet

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Part Number:
STB11NM60N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 ·  100% avalanche tested
 ·  Low input capacitance and gate charge
 ·  Low gate input resistance


Application

 ·  Switching applications


Specifications

Symbol
 Parameter
Value
Unit
TO-220/I²PAK
D/D²PAK/IPAK
TO-220FP
VDS
 Drain-source voltage (VGS=0)
600
V
VGS
 Gate-source voltage
± 25
V
ID
 Drain current (continuous) at TC = 25
10
10(1)
A
ID
 Drain current (continuous) at TC = 100
6.3
6.3(1)
A
IDM(2)
 Drain current (pulsed)
40
40(1)
W
PTOT
 Total dissipation at TC = 25
90
25
W
  Derating factor
0.8
0.2
W/
dv/dt (3)
 Peak diode recovery voltage slope
15
V/ns
VISO
 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25)
--
2500
V
Tstg
 Storage temperature
-55 to 150
TJ
 Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10 A, di/dt 400 A/s, VDD = 80% V(BR)DSS


Description

This series of STB11NM60N is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




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