Position: Home  > All Categories> Integrated Circuits (ICs) > STB11NM80

STB11NM80

Features: ` TYPICAL RDS(on) = 0.35` LOW GATE INPUT RESISTANCE ` LOW INPUT CAPACITANCE AND GATE CHARGE` BEST Rds(on) * Qg IN THE INDUSTRYApplicationThe 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies. Specificatio...

product image

STB11NM80 Picture
See larger image
SeekIC No. : 004507081 Detail

STB11NM80: Features: ` TYPICAL RDS(on) = 0.35` LOW GATE INPUT RESISTANCE ` LOW INPUT CAPACITANCE AND GATE CHARGE` BEST Rds(on) * Qg IN THE INDUSTRYApplicationThe 800 V MDmesh™ family is very suitable for...

STB11NM80 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB11NM80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.35
 ` LOW GATE INPUT RESISTANCE
 ` LOW INPUT CAPACITANCE AND GATE CHARGE
 ` BEST Rds(on) * Qg IN THE INDUSTRY


Application

The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies. 




Specifications

Symbol Parameter
Value
Unit
TO-220/D2PAK
TO-247		 TO-220FP
VDS Drain-source Voltage (VGS = 0)
800
V
VDGR Drain-gate Voltage (RGS = 20 k)
800
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
11
11(*)
A
ID Drain Current (continuos) at TC = 100
4.7
4.7(*)
A
IDM() Drain Current (pulsed)
44
44(*)
A
PTOT Total Dissipation at TC = 25
150
35
W
Derating Factor
1.2
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)ISD<11A, di/dt<400A/s, VDD<V(BR)DSS, TJ<TJMAX
(*) Limited only by the Maximum Temperature Allowed


Description

The STB11NM80 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Integrated Circuits (ICs)
TA8435H
1MB12-140
LED Products
LM24P20
KCG057QV1DB-G770
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more