STB11NM80T4, US $ 2.69-4.06 , STMicroelectronics, STB11NM80T4 DataSheet download, circuit diagram from SeekIC.com

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STB11NM80T4: MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

STB11NM80T4 Data Sheet

US $ 2.69~4.06 / Piece | Get Latest Price

Part Number:: STB11NM80T4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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$4.06
$3.32
$2.92
$2.69

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	11 A
Resistance Drain-Source RDS (on) :	0.4 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.4 Ohms

Parameters:

Technical/Catalog Information	STB11NM80T4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	400 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	1630pF @ 25V
Power - Max	150W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	43.6nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB11NM80T4 STB11NM80T4 497 4319 2 ND 49743192ND 497-4319-2

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STB11NM80T4

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