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STB120NF10

Features: ` TYPICAL RDS(on) = 0.009 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· AUDIO AMPLIFIERS· POWER TOOLSSpecifications Symbol Parameter Va...

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SeekIC No. : 004507082 Detail

STB120NF10: Features: ` TYPICAL RDS(on) = 0.009 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REE...

STB120NF10 Data Sheet

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Part Number:
STB120NF10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.009
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` SURFACE-MOUNTING D²PAK (TO-263)
  POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")


Application

 · AUDIO AMPLIFIERS
 · POWER TOOLS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
100
V
VDGR Drain-gate Voltage (RGS = 20 k)
100
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
85
A
IDM() Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
312
W
Derating Factor
2.08
W/
dv/dt (1) Peak Diode Recovery voltage slope
10
V/ns
EAS(2) Single Pulse Avalanche Energy
550
mJ
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature

() Pulse width limited by safe operating area.
(1) ISD120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID = 60A, VDD = 50V




Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. STB120NF10 is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.




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