Position: Home  > All Categories> Integrated Circuits (ICs) > STB12NK80Z-S

STB12NK80Z-S

Features: ` TYPICAL RDS(on) = 0.65 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITY Application·IDEAL FOR HIGH DENSITY LOW PROFILE ADAPTERSSpecifications Symbol Parameter Value Unit ...

product image

STB12NK80Z-S Picture
See larger image
SeekIC No. : 004507087 Detail

STB12NK80Z-S: Features: ` TYPICAL RDS(on) = 0.65 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITY Application...

STB12NK80Z-S Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB12NK80Z-S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` TYPICAL RDS(on) = 0.65
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

·IDEAL FOR HIGH DENSITY LOW PROFILE ADAPTERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
800
V
VDGR Drain-gate Voltage (RGS = 20 k)
800
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
10.5
A
ID Drain Current (continuos) at TC = 100
6.6
A
IDM() Drain Current (pulsed)
42
A
PTOT Total Dissipation at TC = 25
190
W
Derating Factor
1.51
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
6000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 150
(`) Pulse width limited by safe operating area
(1) ISD 10.5A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STB12NK80Z-S SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such STB12NK80Z-S series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Cable Assemblies
CS1W-CN114
XW2Z-500T
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Switches
US32DMRJ
HBGQ22P-11ET
View more