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STB12NK80Z

Features: · EXTREMELY HIGH dv/dt CAPABILITY· IMPROVED ESD CAPABILITY· 100% AVALANCHE TESTED· GATE CHARGE MINIMIZED· VERY LOW INTRINSIC CAPACITANCES· VERY GOOD MANUFACTURING REPEABILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTOR AND PFCSpecifications ...

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SeekIC No. : 004507086 Detail

STB12NK80Z: Features: · EXTREMELY HIGH dv/dt CAPABILITY· IMPROVED ESD CAPABILITY· 100% AVALANCHE TESTED· GATE CHARGE MINIMIZED· VERY LOW INTRINSIC CAPACITANCES· VERY GOOD MANUFACTURING REPEABILITYApplication· H...

STB12NK80Z Data Sheet

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Part Number:
STB12NK80Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 · EXTREMELY HIGH dv/dt CAPABILITY
 · IMPROVED ESD CAPABILITY
 · 100% AVALANCHE TESTED
 · GATE CHARGE MINIMIZED
 · VERY LOW INTRINSIC CAPACITANCES
 · VERY GOOD MANUFACTURING REPEABILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTOR AND PFC


Specifications

Symbol Parameter
Value
Unit
VDS Drain-Source Voltage (VGS = 0)
800
V
VDGR Drain-gate Voltage (RGS = 20k)
800
V
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
10.5
A
ID Drain Current (continuous) at TC = 100
6.6
A
IDM Note 2 Drain Current (pulsed)
42
A
PTOT Total Dissipation at TC = 25
190
W
  Derating Factor
1.51
W/
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k)
6000
V
dv/dt Note 1 Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150



Description

The STB12NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.




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