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STB12NM50-1

Features: ` TYPICAL RDS(on) = 0.30 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` LOW INPUT CAPACITANCE AND GATE CHARGE` 100% AVALANCHE TESTED` LOW GATE INPUT RESISTANCE ` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSApplicationThe MDmesh™ family is very suitable for increasing power density...

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STB12NM50-1: Features: ` TYPICAL RDS(on) = 0.30 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` LOW INPUT CAPACITANCE AND GATE CHARGE` 100% AVALANCHE TESTED` LOW GATE INPUT RESISTANCE ` TIGHT PROCESS CONTROL AND HIGH M...

STB12NM50-1 Data Sheet

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Part Number:
STB12NM50-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.30
`  HIGH dv/dt AND AVALANCHE CAPABILITIES
`  LOW INPUT CAPACITANCE AND GATE CHARGE
`  100% AVALANCHE TESTED
`  LOW GATE INPUT RESISTANCE
`  TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter
Value
Unit
STB12NM50
STB12NM50
STP12NM50
STP12NM50FP
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
12
12(*)
A
ID Drain Current (continuos) at TC = 100
7.5
7.5(*)
A
IDM() Drain Current (pulsed)
48
48(*)
A
PTOT Total Dissipation at TC = 25
160
35
W
Derating Factor
1.28
0.28
W/
VISO Insulation Withstand Voltage (DC)
-
2500
V
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
Tj
Tstg
 Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150

() Pulse width limited by safe operating area
(1) ISD 12A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STB12NM50-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




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