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STB12NM60N-1

MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET

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SeekIC No. : 00159987 Detail

STB12NM60N-1: MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET

STB12NM60N-1 Data Sheet

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Part Number:
STB12NM60N-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.41 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.41 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance


Application

· Switching application


Specifications

Symbol
 Parameter
Value
Unit
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
VDS
 Drain-source voltage (VGS=0)
600
V
VGS
 Gate-source voltage
± 25
V
ID
 Drain current (continuous) at TC = 25
10
10(1)
A
ID
 Drain current (continuous) at TC = 100
6.3
6.3(1)
A
IDM(2)
 Drain current (pulsed)
40
40(1)
A
PTOT
 Total dissipation at TC = 25
90
25
A
dv/dt (3)
 Peak diode recovery voltage slope
15
V/ns
VISO
 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25)
--
2500
V
Tj,Tstg
Operating junction temperature Storage temperature
-55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/s, VDD =80% V(BR)DSS


Description

This STB12NM60N-1 series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




Parameters:

Technical/Catalog InformationSTB12NM60N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs410 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 960pF @ 50V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs30.5nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB12NM60N 1
STB12NM60N1



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