STB13005

The STB13005 is manfactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Enitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The features of STB13005 are: (1)medium voltage capability; (2)NPN transistors; (3)low spread of dynamic parameters; (4)minimum LOT-TO-LOT spread for reliable operation; (5)very high switching speed; (6)through-hole I2PAK power package in tube.

The following is about the maximum ratings of STB13005: (1)collector-emitter voltage(VBE=0): 700V; (2)collector-emitter voltage(IB=0): 400V; (3)emitter-base voltage(IC=0): 9V; (4)collector current: 4A; (5)collector peak current(tp<5ms): 8A; (6)base current: 2A; (7)base peak current(tp<5ms): 4A; (8)total dissipation at Tc=25: 75W; (9)storage temperature: -65 to 150; (10)max. operating junction temperature: 150.