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STB130NH02L

Features: ` TYPICAL RDS(on) = 0.0034 @ 10 V` TYPICAL RDS(on) = 0.005 @ 5 V` RDS(ON) * Qg INDUSTRY's BENCHMARK` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` LOW THRESHOLD DEVICE` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 )Applicati...

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STB130NH02L: Features: ` TYPICAL RDS(on) = 0.0034 @ 10 V` TYPICAL RDS(on) = 0.005 @ 5 V` RDS(ON) * Qg INDUSTRY's BENCHMARK` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` LOW THRESHOLD DEVICE` SURFACE-MO...

STB130NH02L Data Sheet

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Part Number:
STB130NH02L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.0034 @ 10 V
` TYPICAL RDS(on) = 0.005 @ 5 V
` RDS(ON) * Qg INDUSTRY's BENCHMARK
` CONDUCTION LOSSES REDUCED
` SWITCHING LOSSES REDUCED
` LOW THRESHOLD DEVICE
` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")


Application

· SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER
· OR-ING DIODE


Specifications

Symbol
Parameter
Value
Unit
Vspik(1) Drain-source Voltage Rating
30
V
VDS
 Drain-source Voltage (VGS = 0)
24
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
24
V
VGS
 Gate- source Voltage
± 20
V
ID(2)
 Drain Current (continuos) at TC = 25
90
A
ID(2)
 Drain Current (continuos) at TC = 100
90
A
IDM (3)
 Drain Current (pulsed)
360
A
Ptot
 Total Dissipation at TC = 25
150
mW
 Derating Factor
1
W/
EAS (4)
 Single Pulse Avalanche Energy
900
mJ
Tstg
 Storage Temperature
-55 to 175
Tj
 Max. Operating Junction Temperature



Description

The STB130NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.




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