Position: Home  > All Categories> Integrated Circuits (ICs) > STB135N10

STB135N10

ApplicationPRIMARY SWITCH IN TELECOM DC-DC CONVERTERHIGH-EFFICIENCY DC-DC CONVERTERS42V AUTOMOTIVE APPLICATIONSSYNCHRONOUS RECTIFICATIONDIESEL INJECTIONPWM UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Vol...

product image

STB135N10 Picture
See larger image
SeekIC No. : 004507095 Detail

STB135N10: ApplicationPRIMARY SWITCH IN TELECOM DC-DC CONVERTERHIGH-EFFICIENCY DC-DC CONVERTERS42V AUTOMOTIVE APPLICATIONSSYNCHRONOUS RECTIFICATIONDIESEL INJECTIONPWM UPS AND MOTOR CONTROLSpecifications S...

STB135N10 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB135N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

PRIMARY SWITCH IN TELECOM DC-DC CONVERTER
HIGH-EFFICIENCY DC-DC CONVERTERS
42V AUTOMOTIVE APPLICATIONS
SYNCHRONOUS RECTIFICATION
DIESEL INJECTION
PWM UPS AND MOTOR CONTROL


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage ± 20 V
ID(*) Drain Current (continuous) at TC = 25°C 135 A
ID Drain Current (continuous) at TC = 100°C 96 A
IDM(1) Drain Current (pulsed) 540 A
Ptot Total Dissipation at TC = 25°C 150 W
  Derating Factor 1 W/°C
dv/dt (2) Peak Diode Recovery voltage slope TBD V/ns
EAS (3) Single Pulse Avalanche Energy TBD mJ
Tstg Storage Temperature -55 to 175 °C
Tj Operating Junction Temperature



Description

This STB135N10 is the result of STMicroelectronics's well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode's reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Circuit Protection
A50QS75-4Y
F-17*77
Discrete Semiconductor Products
T508N12TOF
MUR20040
Audio Products
HUC1002
WM-64CT
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more