Features: TYPE VDSS RDS(on) ID STB140NF55STP140NF55 55 V55 V < 0.008 < 0.008 80 A80 A TYPICAL RDS(on) = 0.0065 Application MOTOR CONTROL HIGH CURRENT, SWITCHING APPLICATIONS AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit ...
STB140NF55: Features: TYPE VDSS RDS(on) ID STB140NF55STP140NF55 55 V55 V < 0.008 < 0.008 80 A80 A TYPICAL RDS(on) = 0.0065 Application MOTOR CONTROL HIGH CURRENT, SWITCHING...
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
|
TYPE |
VDSS |
RDS(on) |
ID |
|
STB140NF55 STP140NF55 |
55 V 55 V |
< 0.008 < 0.008 |
80 A 80 A |
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
55 |
V |
| VGS |
Gate-source Voltage |
±20 |
V |
| ID |
Drain Current (continuous) at Tc = 25 °C |
80 |
A |
| ID |
Drain Current (continuous) at Tc = 100 °C |
80 |
A |
| IDM(•) |
Drain Current (pulsed) |
320 |
A |
| Ptot |
Total Dissipation at Tc = 25 °C |
300 |
W |
|
Derating Factor |
2 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
10 |
V/ns |
| EAS(2) |
Single Pulse Avalanche Energy |
1.3 |
mJ |
| Tstg |
Storage Temperature |
-55 to 175 |
°C |
| Tj |
Max. Operating Junction Temperature |
This Power Mosfet STB140NF55 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.