STB14NK50Z-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.38 Ohms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.34
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP14NK50Z STB14NK50Z/-1	STP14NK50ZFP	STW14NK50Z
VDS	Drain-source Voltage (VGS = 0)	500			V
VDGR	Drain-gate Voltage (RGS = 20 k)	500			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuos) at TC = 25	14	14(*)	14	A
ID	Drain Current (continuos) at TC = 100	7.6	7.6(*)	7.6	A
IDM()	Drain Current (pulsed)	48	48(*)	48	A
PTOT	Total Dissipation at TC = 25	150	35	150	W
	Derating Factor	1.20	0.28	1.20	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

() Pulse width limited by safe operating area
(1) I_SD 14A, di/dt200A/s, V_DDV_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STB14NK50Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STB14NK50Z-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	92nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB14NK50Z 1 STB14NK50Z1