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STB15NK50Z-1

Features: ` TYPICAL RDS(on) = 0.30 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGSp...

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STB15NK50Z-1: Features: ` TYPICAL RDS(on) = 0.30 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication·...

STB15NK50Z-1 Data Sheet

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Part Number:
STB15NK50Z-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.30
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
STP15NK50Z
STB15NK50Z
STB15NK50Z-1
STP15NK50ZFP
STW15NK50Z
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
14
14(*)
14
A
ID Drain Current (continuos) at TC = 100
8.8
8.8(*)
8.8
A
IDM(`) Drain Current (pulsed)
56
56(*)
56
A
PTOT Total Dissipation at TC = 25
160
40
160
W
Derating Factor
1.28
0.32
1.28
W/
IGS Gate-source Current (DC)
mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
--
2500
-
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 14A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series of the STB15NK50Z-1 is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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