STB160N75F3

MOSFET 75V 3.5mOhm N-Channel

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SeekIC No. : 00148028 Detail

STB160N75F3: MOSFET 75V 3.5mOhm N-Channel

floor Price/Ceiling Price

US $ 2.23~3.36 / Piece | Get Latest Price
Part Number:
STB160N75F3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
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  • 10~100
  • 100~250
  • Unit Price
  • $3.36
  • $2.7
  • $2.45
  • $2.23
  • Processing time
  • 15 Days
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  • 15 Days
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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.004 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 120 A
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 75 V
Resistance Drain-Source RDS (on) : 0.004 Ohms


Features:

Ultra low on-resistance
100% Avalanche tested



Application

Switching application


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 75 V
VGS Gate-source voltage ± 20 V
ID(1) Drain current (continuous) at TC = 25°C 120 A
ID(1) Drain current (continuous) at TC = 100°C 96 A
IDM(2) Drain current (pulsed) 480 A
PTOT(3) Total dissipation at TC = 25°C 315 W
  Derating factor 2.1 W/°C
dv/dt Peak diode recovery voltage slope Tbd V/ns
EAS Single pulse avalanche energy Tbd mJ
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175 °C
1. Current limited by package
2. Pulse width limited by safe operating area
3. Rated according to Rthj-case



Description

This N-channel enhancement mode Power MOSFET of the STB160N75F3 is the latest refinement of STMicroelectronics unique "Single Feature Size™"strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge




Parameters:

Technical/Catalog InformationSTB160N75F3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs4 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 6750pF @ 25V
Power - Max330W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB160N75F3
STB160N75F3
497 7937 1 ND
49779371ND
497-7937-1



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