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STB160NF02L

Features: ` TYPICAL RDS(on) = 0.0018` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` VERY LOW GATE CHARGE` 100% AVALANCHE TESTEDApplication· BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs· DC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS...

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STB160NF02L: Features: ` TYPICAL RDS(on) = 0.0018` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` VERY LOW GATE CHARGE` 100% AVALANCHE TESTEDApplication· BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs· DC-D...

STB160NF02L Data Sheet

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Part Number:
STB160NF02L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.0018
 `  LOW THRESHOLD DRIVE
 `  ULTRA LOW ON-RESISTANCE
 `  VERY LOW GATE CHARGE
 `  100% AVALANCHE TESTED


Application

 · BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs
 · DC-DC CONVERTERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
20
V
VDGR Drain-gate Voltage (RGS = 20 k)
20
V
VGS Gate- source Voltage
±15
V
ID(1) Drain Current (continuos) at TC = 25
160
A
ID Drain Current (continuos) at TC = 100
113
A
IDM() Drain Current (pulsed)
640
A
PTOT Total Dissipation at TC = 25
300
W
  Derating Factor
2
W/
EAS(2) Single Pulse Avalanche Energy
2.62
mJ
Tstg Storage Temperature
65 to 175
Tj Max. Operating Junction Temperature
175
() Pulse width limited by safe operating area
(1) Limited by Package
(2) ISD 100A, di/dt300A/s, VDD V(BR)DSS, Tj TJMAX.


Description

This Power MOSFET of the STB160NF02L is the latest development ofSTMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density with ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial.




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