Features: ` TYPICAL RDS(on) = 0.0026 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` LOGIC LEVEL DEVICE` 100% AVALANCHE TESTED` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 )Application· HIGH CURRENT, HIGH SWITCHING SPEED· MOTOR CONTROL, AUDIO...
STB160NF3LL: Features: ` TYPICAL RDS(on) = 0.0026 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` LOGIC LEVEL DEVICE` 100% AVALANCHE TESTED` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR I...
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate- source Voltage |
±15 |
V |
| ID(*) | Drain Current (continuos) at TC = 25 |
160 |
A |
| ID | Drain Current (continuos) at TC = 100 |
160 |
A |
| IDM() | Drain Current (pulsed) |
640 |
A |
| Ptot | Total Dissipation at TC = 25 |
300 |
W |
| Derating Factor |
2 |
W/ | |
| EAS(1) | Single Pulse Avalanche Energy |
1.2 |
J |
| Tstg | Storage Temperature |
55 to 175
|
|
| Tj | Max. Operating Junction Temperature |
This Power MOSFET of the STB160NF3LL is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.