STB160NF3LL

Features: ` TYPICAL RDS(on) = 0.0026 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` LOGIC LEVEL DEVICE` 100% AVALANCHE TESTED` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 )Application· HIGH CURRENT, HIGH SWITCHING SPEED· MOTOR CONTROL, AUDIO...

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SeekIC No. : 004507111 Detail

STB160NF3LL: Features: ` TYPICAL RDS(on) = 0.0026 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` LOGIC LEVEL DEVICE` 100% AVALANCHE TESTED` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR I...

floor Price/Ceiling Price

Part Number:
STB160NF3LL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

TYPICAL RDS(on) = 0.0026
LOW THRESHOLD DRIVE
ULTRA LOW ON-RESISTANCE
LOGIC LEVEL DEVICE
100% AVALANCHE TESTED
SURFACE-MOUNTING D2PAK (TO-263)
   POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")



Application

·  HIGH CURRENT, HIGH SWITCHING SPEED
·  MOTOR CONTROL, AUDIO AMPLIFIERS
·  DC-DC & DC-AC CONVERTERS
·  SOLENOID AND RELAY DRIVERS



Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
30
V
VDGR Drain-gate Voltage (RGS = 20 k)
30
V
VGS Gate- source Voltage
±15
V
ID(*) Drain Current (continuos) at TC = 25
160
A
ID Drain Current (continuos) at TC = 100
160
A
IDM() Drain Current (pulsed)
640
A
Ptot Total Dissipation at TC = 25
300
W
  Derating Factor
2
W/
EAS(1) Single Pulse Avalanche Energy
1.2
J
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited by Package
(1) Starting Tj = 25 , ID = 80A, VDD = 20V



Description

This Power MOSFET of the STB160NF3LL is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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