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STB16NB25

Features: ` TYPICAL RDS(on) = 0.220 ` 100% AVALANCHE TESTED ` VERY LOW INTRINSIC CAPACITANCES ` GATE CHARGE MINIMIZED ` EXTREMELY HIGH dv/dt CAPABILITY ` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ` ADD SUFFIX T4 FORORDERING IN TAPE & REELApplication · HIGH CURRENT, HIGH SPEED SWITCHING...

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SeekIC No. : 004507112 Detail

STB16NB25: Features: ` TYPICAL RDS(on) = 0.220 ` 100% AVALANCHE TESTED ` VERY LOW INTRINSIC CAPACITANCES ` GATE CHARGE MINIMIZED ` EXTREMELY HIGH dv/dt CAPABILITY ` FOR THROUGH-HOLE VERSION CONTACT SALES OFF...

STB16NB25 Data Sheet

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Part Number:
STB16NB25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

  `  TYPICAL RDS(on) = 0.220
  `  100% AVALANCHE TESTED
  `  VERY LOW INTRINSIC CAPACITANCES
  `  GATE CHARGE MINIMIZED
  `  EXTREMELY HIGH dv/dt CAPABILITY
  `  FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
  `  ADD SUFFIX "T4" FORORDERING IN TAPE & REEL


Application

  ·  HIGH CURRENT, HIGH SPEED SWITCHING
  ·  UNINTERRUPTIBLE POWER SUPPLY (UPS)
  ·  DC-AC CONVERTERS FOR WELDING
     EQUIPMENT AND UNINTERRUPTIBLE
     POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)
250
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
16
A
ID Drain Current (continuos) at TC = 100
10
A
IDM() Drain Current (pulsed)
64
A
Ptot Total Dissipation at TC = 25
140
W
  Derating Factor
1.12
W/
dv/dt (1) Peak Diode Recovery voltage slope
5.5
 V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
150
() Pulse width limited by safe operating area
(1) ISD 16A, di/dt200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process of the STB16NB25, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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