Features: ` TYPICAL RDS(on) = 0.07` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE AT 100 ` LOW THRESHOLD DRIVE` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 )Application· MOTOR CONTROL, AUDIO AMPLIFIERS· HIGH CURRENT, HIGH SPEED SWITCHING· SOL...
STB16NF06L: Features: ` TYPICAL RDS(on) = 0.07` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE AT 100 ` LOW THRESHOLD DRIVE` SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REE...
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
60 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
| VGS | Gate- source Voltage |
±16 |
V |
| ID | Drain Current (continuos) at TC = 25 |
16 |
A |
| ID | Drain Current (continuos) at TC = 100 |
11 |
A |
| IDM() | Drain Current (pulsed) |
64 |
A |
| Ptot | Total Dissipation at TC = 25 |
45 |
W |
| Derating Factor |
0.3 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
23 |
V/ns |
| EAS(2) | Single Pulse Avalanche Energy |
127 |
mJ |
| Tstg | Storage Temperature |
-65 to 175 |
|
| Tj | Max. Operating Junction Temperature | -55 to 175 |
This Power MOSFET of the STB16NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.