Features: ` TYPICAL RDS(on) = 0.38 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIESSpecifications Symbol Pa...
STB16NK60Z-S: Features: ` TYPICAL RDS(on) = 0.38 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication·...
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS | Gate- source Voltage |
± 30 |
V |
| ID | Drain Current (continuos) at TC = 25 |
14 |
A |
| ID | Drain Current (continuos) at TC = 100 |
8.8 |
A |
| IDM(`) | Drain Current (pulsed) |
6 |
A |
| PTOT | Total Dissipation at TC = 25 |
190 |
W |
| Derating Factor |
1.51 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
kV |
| dv/dt (1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 |
The STB16NK60Z-S SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.