STB16NK65Z-S

MOSFET N Ch 650 V 0.38 Ohm 13A

product image

STB16NK65Z-S Picture
SeekIC No. : 00160411 Detail

STB16NK65Z-S: MOSFET N Ch 650 V 0.38 Ohm 13A

floor Price/Ceiling Price

Part Number:
STB16NK65Z-S
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2SPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.5 Ohms
Package / Case : I2SPAK


Features:

 ` TYPICAL RDS(on) = 0.38
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` GATE CHARGE MINIMIZED
 ` VERY LOW INTRINSIC CAPACITANCES
 ` VERY GOOD MANUFACTURING REPEATIBILITY



Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · IDEAL FOR OFF-LINE POWER SUPPLIES



Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
650
V
VDGR Drain-gate Voltage (RGS = 20 k)
650
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
13
A
ID Drain Current (continuos) at TC = 100
8.19
A
IDM() Drain Current (pulsed)
52
A
PTOT Total Dissipation at TC = 25
190
W
  Derating Factor
1.51
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
6000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
55 to 150
(*) Pulse width limited by safe operating area
(1) ISD 13 A, di/dt 200 A/s, VDD V(BR)DSS,Tj TJMAX



Description

The STB16NK65Z-S SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTB16NK65Z-S
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs500 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 2750pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs89nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB16NK65Z S
STB16NK65ZS
497 4098 5 ND
49740985ND
497-4098-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Tapes, Adhesives
803
Batteries, Chargers, Holders
Boxes, Enclosures, Racks
Connectors, Interconnects
View more