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STB16NS25

Features: ` TYPICAL RDS(on) = 0.23` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TELECOM,INDUSTRIAL, AND LIGHTING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS ...

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SeekIC No. : 004507115 Detail

STB16NS25: Features: ` TYPICAL RDS(on) = 0.23` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TELE...

STB16NS25 Data Sheet

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Part Number:
STB16NS25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.23
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · SWITH MODE POWER SUPPLIES (SMPS)
 · DC-DC CONVERTERS FOR TELECOM,INDUSTRIAL, AND LIGHTING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)
250
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
16
A
ID Drain Current (continuos) at TC = 100
11
A
IDM() Drain Current (pulsed)
64
A
PTOT Total Dissipation at TC = 25
140
W
  Derating Factor
1
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
 V/ns
Tstg Storage Temperature
65 to 175
Tj Max. Operating Junction Temperature
175
(•)Pulse width limited by safe operating area
(1) ISD 16A, di/dt300A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination  structure, makes STB16NS25 suitable in coverters for lighting applications.




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