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STB16PF06L

Features: ` TYPICAL RDS(on) = 0.11 ` LOW THRESHOLD DEVICE` LOW GATE CHARGEApplication· MOTOR CONTROL· DC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 k) 60 V VGS Gate- source Vo...

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SeekIC No. : 004507116 Detail

STB16PF06L: Features: ` TYPICAL RDS(on) = 0.11 ` LOW THRESHOLD DEVICE` LOW GATE CHARGEApplication· MOTOR CONTROL· DC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Volt...

STB16PF06L Data Sheet

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Part Number:
STB16PF06L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.11
 ` LOW THRESHOLD DEVICE
 ` LOW GATE CHARGE


Application

 · MOTOR CONTROL
 · DC-DC CONVERTERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)
60
V
VGS Gate- source Voltage
±16
V
ID Drain Current (continuos) at TC = 25
16
A
ID Drain Current (continuos) at TC = 100
11.4
A
IDM() Drain Current (pulsed)
64
A
PTOT Total Dissipation at TC = 25
70
W
Derating Factor
0.4
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
EAS(2) Single Pulse Avalanche Energy
250
mJ
Tj
Tstg
 Operating Junction Temperature
Storage Temperature
-55 to 175
() Pulse width limited by safe operating area
(1) ISD 16A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C , ID = 8 A , VDD = 30 V
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse


Description

This MOSFET of the STB16PF06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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