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STB190NF04-1

Features: ` TYPICAL RDS(on) =3.9 m` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURENT, HIGH SWITCHING SPEED· AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 40 V VDGR Drain-gate Voltage (RGS = 20 k) 40 V ...

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SeekIC No. : 004507119 Detail

STB190NF04-1: Features: ` TYPICAL RDS(on) =3.9 m` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURENT, HIGH SWITCHING SPEED· AUTOMOTIVESpecifications Symbol Parameter Value Unit ...

STB190NF04-1 Data Sheet

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Part Number:
STB190NF04-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` TYPICAL RDS(on) =3.9 m
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED


Application

 · HIGH CURENT, HIGH SWITCHING SPEED
 · AUTOMOTIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID(`) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
120
A
IDM(``) Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
310
W
Derating Factor
2.07
W/
dv/dt (1) Peak Diode Recovery voltage slope
7
V/ns
EAS(1) Single Pulse Avalanche Energy
860
mJ
Tstg Storage Temperature
-55 to 175

Tj
 Max. Operating Junction Temperature
(`) Current limited by package
(``) Pulse width limited by safe operating area.
1) ISD 190A, di/dt 600A/s, VDDV(BR)DSS, Tj TJMAX


Description

This Power MOSFET of the STB190NF04-1 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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