FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Input Capacitance (Ciss) @ Vds: 5100pF @ 25V
Gate Charge (Qg) @ Vgs: 210nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 120A
Power - Max: 310W
Manufacturer: STMicroelectronics
Series: STripFET™
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
Features: · STANDARD THRESHOLD DRIVE
· 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED
· AUTOMOTIVESpecifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
40 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
40 |
V |
| VGS |
Gate- source Voltage |
± 20 |
V |
| ID(#) |
Drain Current (continuos) at TC = 25 |
120 |
A |
| ID(#) |
Drain Current (continuos) at TC = 100 |
120 |
A |
| IDM(`) |
Drain Current (pulsed) |
480 |
A |
| PTOT |
Total Dissipation at TC = 25 |
310 |
W |
|
Derating Factor |
2.07 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
1.5 |
V/ns |
| EAS(2) |
Single Pulse Avalanche Energy |
1.3 |
J |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 175 |
|
(`) Pulse width limited by safe operating area
(1) ISD 120A, di/dt 500A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by PackageDescriptionThis MOSFET STB200NF04-1 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STB200NF04-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 90A, 10V |
| Input Capacitance (Ciss) @ Vds | 5100pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STB200NF04 1
STB200NF041
497 3512 5 ND
49735125ND
497-3512-5
|
STB200NF04-1 Data Sheet
