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STB200NF04

Features: · STANDARD THRESHOLD DRIVE· 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 40 V VDGR Drain-gate Voltage (RGS = 20 k) 40 V VGS Gate- source Vo...

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SeekIC No. : 004507123 Detail

STB200NF04: Features: · STANDARD THRESHOLD DRIVE· 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Volt...

STB200NF04 Data Sheet

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Part Number:
STB200NF04
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

· STANDARD THRESHOLD DRIVE
· 100% AVALANCHE TESTED


Application

· HIGH CURRENT, HIGH SWITCHING SPEED
· AUTOMOTIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID(#) Drain Current (continuos) at TC = 25
120
A
ID(#) Drain Current (continuos) at TC = 100
120
A
IDM(`) Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
310
W
Derating Factor
2.07
W/
dv/dt (1) Peak Diode Recovery voltage slope
1.5
V/ns
EAS(2) Single Pulse Avalanche Energy
1.3
J
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 175

(`) Pulse width limited by safe operating area
(1) ISD 120A, di/dt 500A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package


Description

This MOSFET STB200NF04 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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