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STB20NE06

Features: ` TYPICAL RDS(on) = 0.06 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE CHARGE 100 ` APPLICATIONORIENTED CHARACTERIZATION` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication·DC MOTOR CONTROL·DC-DC & DC-AC CONVERTERS· SYNCHRONOUS RECTIFICATIONSpecifications ...

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SeekIC No. : 004507124 Detail

STB20NE06: Features: ` TYPICAL RDS(on) = 0.06 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE CHARGE 100 ` APPLICATIONORIENTED CHARACTERIZATION` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApp...

STB20NE06 Data Sheet

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Part Number:
STB20NE06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.06
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` LOW GATE CHARGE 100
` APPLICATIONORIENTED CHARACTERIZATION
` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

 · DC MOTOR CONTROL
 · DC-DC & DC-AC CONVERTERS
 · SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)
60
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
20
A
ID Drain Current (continuos) at TC = 100
14
A
IDM() Drain Current (pulsed)
80
A
Ptot Total Dissipation at TC = 25
70
W
  Derating Factor
0.47
W/
dv/dt (1) Peak Diode Recovery voltage slope
7
 V/ns
Tstg Storage Temperature
65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area


Description

This Power Mosfet STB20NE06 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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