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STB20NE06L

Features: ` TYPICAL RDS(on) = 0.06 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE CHARGE 100 ` LOW THRESHOLD DRIVE` ADD SUFFIX T4 FORORDERING IN TAPE & REEApplication· DC MOTOR CONTROL· DC-DC & DC-AC CONVERTERS· SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parame...

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SeekIC No. : 004507125 Detail

STB20NE06L: Features: ` TYPICAL RDS(on) = 0.06 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE CHARGE 100 ` LOW THRESHOLD DRIVE` ADD SUFFIX T4 FORORDERING IN TAPE & REEApplication· DC MOTO...

STB20NE06L Data Sheet

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Part Number:
STB20NE06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.06
 ` EXCEPTIONAL dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` LOW GATE CHARGE 100
 ` LOW THRESHOLD DRIVE
 ` ADD SUFFIX "T4" FORORDERING IN TAPE & REE


Application

· DC MOTOR CONTROL
· DC-DC & DC-AC CONVERTERS
· SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)
60
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
20
A
ID Drain Current (continuos) at TC = 100
14
A
IDM() Drain Current (pulsed)
80
A
Ptot Total Dissipation at TC = 25
70
W
Derating Factor
0.47
W/
dv/dt (1) Peak Diode Recovery voltage slope
7
 V/ns
Tstg Storage Temperature
65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
(1) ISD 20A, di/dt200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

This Power Mosfet STB20NE06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 




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