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STB20NK50Z-S

Features: ` TYPICAL RDS(on) = 0.23 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFCSpecifications...

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SeekIC No. : 004507127 Detail

STB20NK50Z-S: Features: ` TYPICAL RDS(on) = 0.23 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· H...

STB20NK50Z-S Data Sheet

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Part Number:
STB20NK50Z-S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.23
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTEDGATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
17
A
ID Drain Current (continuos) at TC = 100
10.71
A
IDM() Drain Current (pulsed)
68
A
PTOT Total Dissipation at TC = 25
190
W
  Derating Factor
1.51
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
6000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
 V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 150
() Pulse width limited by safe operating area
(1) ISD 17 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STB20NK50Z-S SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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