Features: ` TYPICAL RDS(on) = 0.23 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFCSpecifications...
STB20NK50Z: Features: ` TYPICAL RDS(on) = 0.23 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· H...
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Features: ` TYPICAL RDS(on) = 0.06 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE...
Symbol | Parameter |
Value |
Unit |
VDS | Drain-source Voltage (VGS = 0) |
500 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V |
VGS | Gate- source Voltage |
±30 |
V |
ID | Drain Current (continuos) at TC = 25 |
17 |
A |
ID | Drain Current (continuos) at TC = 100 |
10.71 |
A |
IDM() | Drain Current (pulsed) |
68 |
A |
PTOT | Total Dissipation at TC = 25 |
190 |
W |
Derating Factor |
1.51 |
W/ | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
dv/dt (1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 |
The STB20NK50Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.