STB20NM50-1

MOSFET N-Ch 500 Volt 20 Amp

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SeekIC No. : 00155654 Detail

STB20NM50-1: MOSFET N-Ch 500 Volt 20 Amp

floor Price/Ceiling Price

US $ 1.22~1.59 / Piece | Get Latest Price
Part Number:
STB20NM50-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.59
  • $1.34
  • $1.27
  • $1.22
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.25 Ohms


Features:

· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE



Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.




Specifications

Symbol Parameter
Value
Unit
    TO-220/
D²PAK/I²PAK
TO-220FP  
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
20
20(Note 3)
A
ID Drain Current (continuous) at TC = 100
12.6
12.6(Note 3)
A
IDM Note 2 Drain Current (pulsed)
80
80(Note 3)
A
PTOT Total Dissipation at TC = 25
192
45
W
Derating Factor
1.2
0.36
W/
dv/dt Note 1 Peak Diode Recovery voltage slope
15
V/ns
VISO Insulation Withstand Volatge (DC)
-
2000
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-65 to 150



Description

The STB20NM50-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.




Parameters:

Technical/Catalog InformationSTB20NM50-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1480pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB20NM50 1
STB20NM501
497 5382 5 ND
49753825ND
497-5382-5



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