STB20NM60-1

MOSFET N-Ch 600 Volt 20 Amp

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STB20NM60-1 Picture
SeekIC No. : 00161467 Detail

STB20NM60-1: MOSFET N-Ch 600 Volt 20 Amp

floor Price/Ceiling Price

Part Number:
STB20NM60-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.29 Ohms


Features:

` TYPICAL RDS(on) = 0.25
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE



Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter
Value
Unit
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
20
20(*)
A
ID Drain Current (continuos) at TC = 100
12.6
12.6(*)
A
IDM(`) Drain Current (pulsed)
80
80(*)
A
PTOT Total Dissipation at TC = 25
190
190
W
Derating Factor
1.2
0.36
W/
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
VISO Insulation Winthstand Voltage (DC)
--
2500
V
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
150
(`)Pulse width limited by safe operating area
(1) ISD 20 A, di/dt 400 A/s, VDD V(BR)/DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed



Description

The STB20NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




Parameters:

Technical/Catalog InformationSTB20NM60-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs290 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs54nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB20NM60 1
STB20NM601
497 5383 5 ND
49753835ND
497-5383-5



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