MOSFET N-Ch 600 Volt 20 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.29 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Symbol | Parameter |
Value |
Unit | |
TO-220/D²PAK/ I²PAK/TO-247 |
TO-220FP | |||
VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
VGS | Gate- source Voltage |
±30 |
V | |
ID | Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
ID | Drain Current (continuos) at TC = 100 |
12.6 |
12.6(*) |
A |
IDM(`) | Drain Current (pulsed) |
80 |
80(*) |
A |
PTOT | Total Dissipation at TC = 25 |
190 |
190 |
W |
Derating Factor |
1.2 |
0.36 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
VISO | Insulation Winthstand Voltage (DC) |
-- |
2500 |
V |
Tstg | Storage Temperature |
65 to 150 |
||
Tj | Max. Operating Junction Temperature |
150 |
The STB20NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Technical/Catalog Information | STB20NM60-1 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
Power - Max | 192W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 54nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB20NM60 1 STB20NM601 497 5383 5 ND 49753835ND 497-5383-5 |