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STB210NF02

Features: · TYPICAL RDS(on) = 0.0026W· STANDARD THRESHOLD DRIVE· 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-sourc...

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SeekIC No. : 004507132 Detail

STB210NF02: Features: · TYPICAL RDS(on) = 0.0026W· STANDARD THRESHOLD DRIVE· 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC...

STB210NF02 Data Sheet

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Part Number:
STB210NF02
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TYPICAL RDS(on) = 0.0026W
· STANDARD THRESHOLD DRIVE
· 100% AVALANCHE TESTED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
20
V
VDGR Drain-gate Voltage (RGS = 20 k)
20
V
VGS Gate- source Voltage
±20
V
ID(**) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
120
A
IDM() Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
300
W
  Derating Factor
2.0
W/
dv/dt (1) Peak Diode Recovery voltage slope
1
 V/ns
EAS(2) Single Pulse Avalanche Energy
2.3
J
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD 120A, di/dt250A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 14 V


Description

This STB210NF02 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkabl e manufacturing reproducibility.




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